2002. 9. 3 1/1 semiconductor technical data MPS8050S epitaxial planar npn transistor revision no : 0 high current application. feature complementary to mps8550s. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 100 na emitter cut-off current i ebo v eb =6v, i c =0 - - 100 na collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 40 - - v collector-emitter breakdown voltage v (br)ceo i c =2ma, i b =0 25 - - v dc current gain h fe (1) v ce =1v, i c =5ma 45 135 - h fe (2) (note) v ce =1v, i c =100ma 85 160 300 h fe (3) v ce =1v, i c =800ma 40 110 - collector-emitter saturation voltage v ce(sat) i c =800ma, i b =80ma - 0.28 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b =80ma - 0.98 1.2 v base-emitter voltage v be v ce =1v, i c =10ma - 0.66 1.0 v transition frequency f t v ce =10v, i c =50ma 100 190 - mhz collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 9 - pf characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6 v collector current i c 1.5 a collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature range t stg -55 150 note : h fe (2) classification b:85 160 , c : 120 200 , d : 160 300 * p c : package mounted on 99.5% alumina (10 8 0.6 ) h rank type name marking lot no. bh fe
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